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10-FY064PA050SG10-M582F08 flowpack 1h 600v/50a low inductive 12mm flow1 package h-bridge topology high-speed igbt + ultrafast fwd temperature sensor solar inverter power supply inverter based welding 10-FY064PA050SG10-M582F08 t j =25c, unless otherwise specified parameter symbol value unit h-bridge igbt t h =80c 46 t c =8 0c 61 t h =8 0c 95 t c = 8 0c 144 t sc t j 1 50c 5 s v c c v ge =15v 400 v * measured with phase-change material h-bridge fwd t h =80c 30 t c =8 0c 39 t h =8 0c 50 t c =8 0c 76 * measured with phase-change material w a v 600 c 175 t j max v ce i dc v ge i fsm p tot i cpulse t j max 150 v a 6 50 a v t j =t j max t j =t j max vc e 650v, tj top max t p limited by t j max co l lector-emitter break down voltage dc collector current * pulsed collector current maximum junction temperature peak repetitive reverse voltage power dissipation per igbt * maximum junction temperature short circuit ratings turn off safe operating area non-repetitive peak surge current power dissipation per diode * w 150 c features flow 1 target applications schematic types maximum ratings condition t j =t j max a i f v rrm a t j =t j max 60h z single half-sine wave dc forward current * p tot gate-emitter peak voltage 150 20 300 copyright by vincotech 1 revision: 1
10-FY064PA050SG10-M582F08 t j =25c, unless otherwise specified parameter symbol value unit maximum ratings condition thermal properties insulation properties v is t=2s dc voltage 4000 v min 12,7 mm min 12,7 mm cti >200 -40+(tjmax - 25) c storage temperature t stg -40+125 c c o mparative tracking index insulation voltage creepage distance t op operation temperature under switching condition cle arance copyright by vincotech 2 revision: 1
10-FY064PA050SG10-M582F08 parameter sym bol unit v ge [v] or v gs [v] v r [v] or v ce [v] or v ds [v] i c [a] or i f [a] or i d [a] t j min typ max tj=25c 4,2 5,1 5,8 tj=125c tj=25c 1,38 1,79 2,22 tj=125c 1,99 tj=25c 0,0028 tj=125c tj=25c 150 tj=125c tj=25c 93 tj=125c 96 tj=25c 19 tj=125c 21 tj=25c 133 tj=125c 148 tj=25c 6 tj=125c 24 tj=25c 0,54 tj=125c 0,79 tj=25c 0,32 tj=125c 0,57 thermal resistance chip to heatsink per chip r thjh phase-change material 1,00 k/w thermal resistance chip to heatsink per chip r thjh thermal grease thickness 50um = 1 w/mk 1,17 k /w tj=25c 2,52 2,6 tj=125c 1,84 tj=25c 32 tj=125c 49 tj=25c 16 tj=125c 50 tj=25c 0,29 tj=125c 1,10 di(rec)max tj=25c 9152 /dt tj=125c 5573 tj=25c 0,02 tj=125c 0,13 thermal resistance chip to heatsink per chip r thjh phase-change material 1,39 k/w t hermal resistance chip to heatsink per chip r thjh thermal grease thickness 50um = 1 w/mk 1,64 k /w b vincotech ntc reference b-value tol. 3% 3950 k b (25/100) tj=25c 3996 k tj=25c b-value b (25/50) tol. 3% 120 3000 tj=25c v 30 % ? 22000 +5 -5 2 20 0 15 0 t r t d(off) v ce =v ge erec q gate c rss q rr t rr i ges t f e on e off t d(on) i rrm v f v ge(th) v ce(sat) i ces r gint input capacitance turn-off energy loss per pulse integrated gate resistor h-bridge igbt gate emitter threshold voltage value con d itions characteristic values c mw s a /s f=1mhz rgon=8 ? 0 20 15 r g off=8 ? 15 50 50 1 5 turn-on energy loss per pulse reverse recovered charge h-bridge fwd peak reverse recovery current rev e rse transfer capacitance diode forward voltage gate charge c ies reverse recovery time reverse recovered energy peak rate of fall of recovery current collector-emitter cut-off current incl. diode fall time turn-off delay time turn-on delay time rise time gate-emitter leakage current collector-emitter saturation voltage 650 25 0 520 50 50 0,0008 300 300 mw/k power dissipation p mw rated resistance r power dissipation constant deviation of r25 ? r/r r100=1486 ? thermistor rgon=8 ? 11 non e t j=25c tj=25c tj=100c tj=25c v ns a nc na v ua ? mws ns pf tj =25c copyright by vincotech 3 revision: 1
10-FY064PA050SG10-M582F08 figure 1 h-bridge igbt figure 2 h-bridge igbt typical output characteristics i c = f(v ce ) i c = f(v ce ) at at t p = 25 0 s t p = 250 s t j = 25 c t j = 125 c v ge from 7 v to 17 v in steps of 1 v v ge from 7 v to 17 v in steps of 1 v figure 3 h-br idge igbt figure 4 h-bridge fwd typical transfer characteristics typic al diode forward current as i c = f(v ge ) a f unction of forward voltage i f = f(v f ) at at t p = 25 0 s t p = 250 s v c e = 10 v h -bridge typical output characteristics 0 30 60 90 120 150 180 0 1 2 3 4 5 v ce (v) i c (a) 0 10 20 30 40 50 0 2 4 6 8 10 v ge (v) i c (a) t j = 25c t j = t jmax -25c 0 30 60 90 120 150 0 1 2 3 4 5 v f (v) i f (a) t j = 25c t j = t jmax -25c 0 30 60 90 120 150 180 0 1 2 3 4 5 v ce (v) i c (a) copyright by vincotech 4 revision: 1
10-FY064PA050SG10-M582F08 figure 5 h-bridge igbt figure 6 h-bridge igbt typical switching energy losses typic al switching energy losses as a function of collector current as a function of gate resistor e = f(i c ) e = f(r g ) wit h an inductive load at with an inductive load at t j = 25 / 126 c t j = 25/ 126 c v ce = 300 v v ce = 300 v v ge = 15 v v ge = 15 v r gon = 8 ? i c = 50 a r g off = 8 ? figure 7 h-br idge fwd figure 8 h-bridge fwd typical reverse recovery energy loss typic al reverse recovery energy loss as a function of collector current as a function of gate resistor e rec = f(i c ) e rec = f(r g ) wit h an inductive load at with an inductive load at t j = 25 / 126 c t j = 25/ 126 c v ce = 300 v v ce = 300 v v ge = 15 v v ge = 15 v r gon = 8 ? i c = 50 a h -bridge e on high t e off high t e on low t e off low t 0,0 0, 5 1 ,0 1,5 2,0 0 25 50 75 100 i c (a) e (mws) e off high t e on high t e on low t e off low t 0,0 0,5 1,0 1,5 2,0 2,5 0 8 16 24 32 40 r g ( w ) e (mws) t j = t jmax -25c e rec t j = 25c e rec 0 0,0 5 0,1 0,15 0,2 0 25 50 75 100 i c (a) e (mws) t j = t jmax -25c e rec t j = 25c e rec 0 0,05 0,1 0,15 0,2 0 8 16 24 32 40 r g ( w ) e (mws) copyright by vincotech 5 revision: 1
10-FY064PA050SG10-M582F08 figure 9 h-bridge igbt figure 10 h-bridge igbt typical switching times as a typic al switching times as a function of collector current function of gate resistor t = f(i c ) t = f(r g ) wit h an inductive load at with an inductive load at t j = 12 6 c t j = 126 c v ce = 300 v v ce = 300 v v ge = 15 v v ge = 15 v r gon = 8 ? i c = 50 a r g off = 8 ? figure 11 h-br idge fwd figure 12 h-bridge fwd typical reverse recovery time as a typic al reverse recovery time as a function of collector current function of igbt turn on gate resistor t rr = f(i c ) t rr = f(r gon ) at at t j = 25 / 126 c t j = 25/ 126 c v ce = 300 v v r = 300 v v ge = 15 v i f = 50 a r g on = 8 ? v ge = 15 v h-bridge t doff t f t don t r 0,00 0,0 1 0,10 1,00 0 25 50 75 100 i c (a) t ( m s) t j = t jmax -25c t rr t j = 25c t rr 0,00 0,0 3 0,06 0,09 0,12 0 8 16 24 32 40 r g on ( w ww w ) t rr ( m s) t doff t f t don t r 0,00 0,0 1 0,10 1,00 0 8 16 24 32 40 r g ( w ww w ) t ( m s) t j = t jmax -25c t rr t rr t j = 25c 0,00 0,0 1 0,02 0,03 0,04 0,05 0 25 50 75 100 i c (a) t rr ( m s) copyright by vincotech 6 revision: 1
10-FY064PA050SG10-M582F08 figure 13 h-bridge fwd figure 14 h-bridge fwd typical reverse recovery charge as a typic al reverse recovery charge as a function of collector current function of igbt turn on gate resistor q rr = f(i c ) q rr = f(r gon ) at at a t t j = 25 / 126 c t j = 25/ 126 c v ce = 300 v v r = 300 v v ge = 15 v i f = 50 a r g on = 8 ? v ge = 15 v figure 15 h-br idge fwd figure 16 h-bridge fwd typical reverse recovery current as a typic al reverse recovery current as a function of collector current function of igbt turn on gate resistor i rrm = f(i c ) i rrm = f(r gon ) at at t j = 25 / 126 c t j = 25/ 126 c v ce = 300 v v r = 300 v v ge = 15 v i f = 50 a r g on = 8 ? v ge = 15 v h-bridge t j = t jmax - 25c i rrm t j = 25c i rrm 0 20 40 6 0 80 100 0 8 16 24 32 40 r gon ( w ww w ) i rrm (a) t j = t jmax -25c q rr t j = 25c q rr 0 0, 3 0 ,6 0,9 1,2 0 8 16 24 32 40 r g on ( w ) q rr ( m c) t j = t jmax -25c i rrm t j = 25c i rrm 0 10 20 3 0 40 50 60 70 0 25 50 75 100 i c (a) i rrm (a) t j = t jmax -25c q rr t j = 25c q rr 0 0,4 0 ,8 1,2 1,6 0 25 50 75 100 i c (a) q rr ( m c) copyright by vincotech 7 revision: 1
10-FY064PA050SG10-M582F08 figure 17 h-bridge fwd figure 18 h-bridge fwd typical rate of fall of forward typic al rate of fall of forward and reverse recovery current as a and reverse recovery current as a function of collector current function of igbt turn on gate resistor di 0 /dt,di rec /dt = f(i c ) di 0 /d t,di rec /dt = f(r gon ) at at t j = 25 / 126 c t j = 25/ 126 c v ce = 300 v v r = 300 v v ge = 15 v i f = 50 a r g on = 8 ? v ge = 15 v figure 19 h-br idge igbt figure 20 h-bridge fwd igbt transient thermal impedance fwd transient thermal impedance as a function of pulse width as a function of pulse width z thjh = f(t p ) z thjh = f(t p ) at at d = t p / t d = t p / t r thjh = 1,0 0 k/w r thjh = 1,1 7 k/w r thjh = 1,3 9 k/w r thjh = 1,6 4 k/w igbt thermal model values fwd thermal model values r (c/w) tau (s) r (c/w) tau (s) r (c/w) tau (s) r (c/w) tau (s) 0,12 7,7e-01 0,15 7,7e-01 0,04 4,0e+00 0,04 4,0e+00 0,46 1,3e-01 0,54 1,3e-01 0,09 8,3e-01 0,10 8,3e-01 0,25 4,3e-02 0,29 4,3e-02 0,56 1,3e-01 0,65 1,3e-01 0,12 9,4e-03 0,14 9,4e-03 0,40 3,6e-02 0,47 3,6e-02 0,04 1,2e-03 0,05 1,2e-03 0,20 7,3e-03 0,24 7,3e-03 0,12 1,1e-03 0,14 1,1e-03 phase change interface thermal grease phase change interface thermal grease h-bridge t p (s) z thjh (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 t p (s) z th-jh (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 0 5000 10000 15000 20000 25000 30000 35000 0 8 16 24 32 40 r gon ( w ww w ) di rec / dt (a/ m s) di 0 /dt di rec /dt 0 2000 4000 6000 8000 10000 12000 0 25 50 75 100 i c (a) di rec / dt (a/ m m m m s) di rec /dt di 0 /d t copyright by vincotech 8 revision: 1
10-FY064PA050SG10-M582F08 figure 21 h-bridge igbt figure 22 h-bridge igbt power dissipation as a colle ctor current as a function of heatsink temperature function of heatsink temperature p tot = f(t h ) i c = f(t h ) at at t j = 17 5 c t j = 175 c v ge = 15 v fi gure 23 h-br idge fwd figure 24 h-bridge fwd power dissipation as a forwa rd current as a function of heatsink temperature function of heatsink temperature p tot = f(t h ) i f = f(t h ) at at t j = 15 0 c t j = 150 c h-bridge 0 50 100 150 200 0 50 100 150 200 t h ( o c) p tot (w) 0 20 40 60 80 0 50 100 150 200 t h ( o c) i c (a) 0 20 40 60 80 100 120 0 50 100 150 200 t h ( o c) p tot (w) 0 10 20 30 40 50 0 50 100 150 200 t h ( o c) i f (a) copyright by vincotech 9 revision: 1
10-FY064PA050SG10-M582F08 figure 25 h-bridge igbt figure 26 h-bridge igbt safe operating area as a function gate voltage vs gate charge of collector-emitter voltage i c = f(v ce ) v ge = f(q ge ) at at d = single pulse i c = 50 a t h = 80 o c v ge = 15 v t j = t jmax oc figure 29 h-br idge igbt reverse bias safe operating area i c = f(v ce ) at t j = t jmax -25 oc sw itching mode : 3phase spwm h-bridge v ce (v) i c (a) 10 3 10 0 10 -1 10 1 10 2 10 1 10 2 100us 1ms 10ms 100ms dc 10 0 10 3 0 3 6 9 12 15 0 20 40 60 80 100 120 q g (nc) v ge (v) 130v 520v 0 20 40 60 80 100 120 140 160 0 100 200 300 400 500 600 700 v ce (v) i c (a) i c max v ce max i c module i c chip copyright by vincotech 10 revision: 1
10-FY064PA050SG10-M582F08 figure 1 thermistor figure 2 thermistor typical ntc characteristic typic al ntc resistance values as a function of temperature r t = f(t) thermistor ntc-typical temperature characteristic 0 40 0 0 8000 12000 16000 20000 24000 25 50 75 100 125 t (c) r/ ? [ ] w = ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? - 25 100/25 11 25 )( tt b ertr copyright by vincotech 11 revision: 1
10-FY064PA050SG10-M582F08 t j 125 c r gon 8 ? r goff 8 ? figure 1 h-br idge igbt figure 2 h-bridge igbt turn-off switching waveforms & definition of t doff , t eoff turn-on switching waveforms & definition of tdon, t eon (t eoff = integrating time for e off ) (t eon = integrating time for e on ) v ge (0%) = -1 5 v v ge (0%) = -15 v v ge (100%) = 15 v v g e (100%) = 15 v v c (100%) = 300 v v c (100%) = 300 v i c (100%) = 50 a i c (100%) = 50 a t d off = 0,1 5 s t don = 0,1 0 s t eoff = 0,2 3 s t eon = 0,2 3 s figure 3 h-br idge igbt figure 4 h-bridge igbt turn-off switching waveforms & definition of t f turn-on switching waveforms & definition of t r v c (100%) = 300 v v c (100%) = 300 v i c (100%) = 50 a i c (100%) = 50 a t f = 0,0 24 s t r = 0,0 21 s switching definitions h-bridge general conditions = = = i c 1% v ce 90% v ge 90% -25 0 25 50 7 5 100 125 -0,1 0 0,1 0,2 0,3 0,4 time (us) % t doff t eoff v ce i c v ge i c10% v ge10% t don v ce 3% -50 0 50 10 0 150 200 2,4 2,5 2,6 2,7 2,8 time(us) % i c v ce t eon v ge fitted i c10% i c 90% i c 60% i c 40% -25 0 25 50 7 5 100 125 0,04 0,08 0,12 0,16 0,2 time (us) % v ce i c t f i c 10% i c 90% -50 0 50 10 0 150 200 2,58 2,6 2,62 2,64 2,66 2,68 time(us) % t r v ce i c copyright by vincotech 12 r evision: 1
10-FY064PA050SG10-M582F08 figure 5 h-bridge igbt figure 6 h-bridge igbt turn-off switching waveforms & definition of t eoff turn-on switching waveforms & definition of t eon p off (100%) = 15, 12 kw p on (100%) = 15, 12 kw e off (100%) = 0,5 7 mj e on (100%) = 0,7 9 mj t eoff = 0,2 3 s t eon = 0,2 3 s figure 7 h-br idge igbt turn-off switching waveforms & definition of t rr v d (100%) = 300 v i d (100%) = 50 a i r rm (100%) = -49 a t rr = 0,0 5 s switching definitions h-bridge i c 1% v ge 90% -25 0 25 50 7 5 100 125 -0,1 0 0,1 0,2 0,3 time (us) % p off e off t eoff v ce 3% v ge 10% -25 0 25 50 7 5 100 125 150 2,4 2,5 2,6 2,7 2,8 2,9 time(us) % p on e on t eon i rrm 10% i rrm 90% i rrm 100% t rr -150 -10 0 -50 0 50 100 150 2,55 2,6 2,65 2,7 2,75 time(us) % i d v d fitted copyright by vincotech 13 r evision: 1
10-FY064PA050SG10-M582F08 figure 8 h-bridge fwd figure 9 h-bridge fwd turn-on switching waveforms & definition of t qrr turn-on switching waveforms & definition of t erec (t qrr = integrating time for q rr ) (t erec = integrating time for e rec ) i d (100%) = 50 a p r ec (100%) = 15, 12 kw q rr (100%) = 1,1 0 c e rec (100%) = 0,1 3 mj t qrr = 0,1 0 s t erec = 0,1 0 s switching definitions h-bridge t qrr -100 -5 0 0 5 0 100 150 2,55 2,6 2,65 2,7 2,75 % i d q rr time(us) -25 0 25 50 75 100 125 2,55 2,6 2,65 2,7 2,75 2,8 time(us) % p rec e rec t erec copyright by vincotech 1 4 r evision: 1
10-FY064PA050SG10-M582F08 version ordering code in datamatrix as in packaging barcode as without thermal paste 12mm housing 10-FY064PA050SG10-M582F08 m582f08 m582f08 outline pinout ordering code & marking ordering code and marking - outline - pinout copyright by vincotech 15 revision: 1
10-FY064PA050SG10-M582F08 disclaimer lif e support policy as used herein: the information given in this datasheet describes the type of component and does not represent assured characteristics. for tested values please contact vincotech.vincotech reserves the right to make changes without further notice to any products herein to improve reliability, function or design. vincotech does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of vincotech. 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. copyright by vincotech 16 revision: 1

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